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BIOS Setup
DRAM Timing Control
This field allows you to select the DRAM timing setting. Setting to By
SPD enables Max Memclock (Mhz) automatically to be determined by
SPD. Selecting Manual allows users to configure these fields manually.
DRAM CAS Latency
When the “DRAM Timing Control” is set to Manual, this field is adjustable.
The field controls the CAS latency, which determines the timing delay
before SDRAM starts a read command after receiving it. Setting options:
2T, 2.5T, 3T. 2T increases system performance while 3T provides more
stable system performance.
RAS Active Time (tRAS)
When the “DRAM Timing Control” is set to Manual, this field is adjustable.
This setting determines the time RAS takes to read from and write to a
memory cell. Setting options: 4T to 9T.
RAS Precharge Time (tRP)
When the “DRAM Timing Control” is set to Manual, this field is adjustable.
This setting controls the number of cycles for Row Address Strobe (RAS)
to be allowed to precharge. If insufficient time is allowed for the RAS to
accumulate its charge before DRAM refresh, refreshing may be incom-
plete and DRAM may fail to retain data. This item applies only when
synchronous DRAM is installed in the system. Setting options: 2T to 5T.
RAS to CAS Delay (tRCD)
When the “DRAM Timing Control” is set to Manual, this field is adjustable.
When DRAM is refreshed, both rows and columns are addressed
separately. This setup item allows you to determine the timing of the
transition from RAS (row address strobe) to CAS (column address strobe).
The less the clock cycles, the faster the DRAM performance. Settings: 2T
to 5T.
MA 1T/2T Select
This setting controls the SDRAM command rate. Selecting Auto allows
SDRAM signal controller to run at 1T (T=clock cycles) rate. Selecting MA
1T makes SDRAM signal controller run at 2T rate. 1T is faster than 2T.
Setting options: Auto, 2T, 1T.
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